Nitride-free spacer or oxide spacer for embedded flash memory

ABSTRACT

In some embodiments, a semiconductor substrate includes first and second source/drain regions which are separated from one another by a channel region. The channel region includes a first portion adjacent to the first source/drain region and a second portion adjacent the second source/drain region. A select gate is spaced over the first portion of the channel region and is separated from the first portion of the channel region by a select gate dielectric. A memory gate is spaced over the second portion of the channel region and is separated from the second portion of the channel region by a charge-trapping dielectric structure. The charge-trapping dielectric structure extends upwardly alongside the memory gate to separate neighboring sidewalls of the select gate and memory gate from one another. An oxide spacer or nitride-free spacer is arranged in a sidewall recess of the charge-trapping dielectric structure nearest the second source/drain region.

REFERENCE TO RELATED APPLICATIONS

This Application is a Continuation of U.S. application Ser. No.16/396,963, filed on Apr. 29, 2019, which is a Continuation of U.S.application Ser. No. 15/938,043, filed on Mar. 28, 2018 (now U.S. Pat.No. 10,347,649, issued on Jul. 9, 2019), which is a Divisional of U.S.application Ser. No. 14/933,046, filed on Nov. 5, 2015 (now U.S. Pat.No. 9,960,176, issued on May 1, 2018). The contents of theabove-referenced Patent Applications are hereby incorporated byreference in their entirety.

BACKGROUND

Flash memory is an electronic non-volatile computer storage medium thatcan be electrically erased and reprogrammed quickly. It is used in awide variety of electronic devices and equipment. Common types of flashmemory cells include stacked gate memory cells and split gate memorycells. Compared to stacked gate memory cells, split gate memory cellshave higher injection efficiency, less susceptibility to short channeleffects, and better over erase immunity.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of a pair of split gate flashmemory cells according to some embodiments of the present disclosure.

FIG. 2 illustrates a flow diagram of some embodiments of a method offorming split gate memory cells.

FIGS. 3-19 illustrate some embodiments of cross-sectional views atvarious stages of manufacture of a method of forming split gate flashmemory cells.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Modern integrated circuits (ICs) often include logic devices andembedded memory disposed on a single substrate or die. One type ofembedded memory included in such ICs is split gate flash memory. A splitgate memory cell includes a source region and a drain region which aredisposed within a semiconductor substrate and which are separated fromone another by a channel region. A select gate (SG) is disposed over afirst portion of the channel region nearest the drain, and is separatedfrom the channel region by a SG dielectric. A memory gate (MG) isdisposed adjacent to a sidewall of the SG and over a second portion ofthe channel region nearest the source, and is separated from the channelregion by a charge-trapping dielectric layer. A nitride spacer, whichcan be formed as an aside during formation of logic devices on the die,can be disposed along a sidewall of the charge-trapping dielectric layerand over the channel region nearest the source.

During operation, the SG can be activated to enable current flow throughthe channel region (e.g., cause a stream of negatively charged electronsto flow between the source and drain regions). While the SG isactivated, a large positive voltage can be applied to the MG, therebyattracting electrons from the channel region towards the MG. Some ofthese electrons become lodged in the charge-trapping layer, therebychanging the threshold voltage (Vt) of the memory cell. The resultant Vtcorresponds to the data state stored in the cell. For example, if morethan a predetermined amount of charge is lodged on the charge-trappinglayer (e.g., magnitude of Vt is greater than some predetermined Vt),then the cell is said to store a first data state (e.g., a logical “0”);whereas if less than the predetermined amount of charge is lodged on thecharge-trapping layer (e.g., magnitude of Vt is less than thepredetermined Vt), then the cell is said to store a second data state(e.g., a logical “1”). By applying suitable bias conditions to the cell,electrons can be placed on (or stripped from) the charge-trapping layerto set corresponding data states for the cell. In this way, data can bewritten to and read from the memory cells.

Unfortunately, the nitride spacer disposed alongside the charge-trappingdielectric and disposed over the channel region can cause charge storageand removal anomalies. These anomalies tend to rear their head more asthe cell undergoes more read and write operations. For example, due tothe presence of the nitride spacer over the channel region, the nitridespacer can tend to undesirably trap charge and shift the Vt of the cellfrom expected values, particularly as the cell ages and has more readand write operations performed thereon.

The present disclosure relates to a split gate flash memory cell where anitride-free spacer or an oxide spacer, either of which is relativelyimpervious to charge-trapping, is inserted in a sidewall recess of thecharge-trapping layer nearest the source. Thus, this inserted spacer canextend along the sidewall recess of the charge-trapping layer directlyover an outer edge portion of the channel region, and can extend upwardsalong the MG sidewall (or along a MG spacer sidewall), thereby limitingundesired charge-trapping. In some embodiments, if a nitride spacer isstill present for the split gate flash memory, the inserted spacereffectively “pushes” the nitride sidewall spacer outwards so the nitridespacer no longer resides over the channel region. In this way, thenitride-free spacer or oxide spacer limits undesirably trapped chargeand provides a flash memory cell with good performance over a longperiod of time.

FIG. 1 illustrates a cross-sectional view of some embodiments of anintegrated circuit 100 comprising a pair of split gate memory cellsdisposed on a semiconductor substrate 108. The pair of split gate memorycell includes first and second memory cells 102 a, 102 b, which areconfigured to store separate data states and which are generally mirrorimages of one another about an axis of symmetry 103. Typically,integrated circuit 100 includes hundreds, thousands, millions, billions,etc., of such memory cells, but only a single pair is illustrated forsimplicity and clarity of understanding.

The first and second memory cells 102 a, 102 b include first and secondindividual source regions 104 a, 104 b, respectively, and a common drainregion 106 which is shared between the first and second memory cells. Itwill be appreciated that although region 106 is described as a “commondrain region” and regions 104 a, 104 b are described as being“individual source regions”, the functionality of these regions may beflipped during some modes of operation and/or in some otherimplementations, such that “the common drain 106” may act as a commonsource region and the “individual source regions 104 a, 104 b” may actas individual drain regions. Thus, the terms “source” and “drain” areinterchangeable in this regard, and may be referred to generically as“source/drain” regions.

The first and second memory cells 102 a, 102 b also include first andsecond select gates 110 a, 110 b, respectively, and first and secondmemory gates 112 a, 112 b, respectively. The first select gate 110 a andfirst memory gate 112 a are arranged over a first channel region 114 a,which separates the first individual source region 104 a and the commondrain region 106. The second select gate 110 b and second memory gate112 b are arranged over a second channel region 114 b, which separatesthe second individual source region 104 b and the common drain region106.

Select gate dielectric 116 a, 116 b, such as silicon dioxide or a high-κdielectric material, is arranged under the first and second select gates110 a, 110 b, and separates the first and second select gates from thesemiconductor substrate 108. Charge-trapping dielectric structure 118 a,118 b separates the first and second memory gates 112 a, 112 b from thesemiconductor substrate 108. Thus, the first and second memory gates 112a, 112 b are disposed on a ledge corresponding to upper surface ofcharge-trapping dielectric structure 118 a, 118 b. The charge-trappingdielectric structure 118 a, 118 b can also extend vertically upwardsbetween neighboring sidewalls of the first select gate 110 a and firstmemory gate 112 a, and between neighboring sidewalls of the secondselect gate 110 b and second memory gate 112 b to provide isolationthere between.

In some embodiments, the charge-trapping dielectric structure 118 a, 118b comprises a charge-trapping layer 119 (e.g. a nitride layer or a layerof randomly arranged sphere-like silicon dots) sandwiched between twodielectric layers 117, 121 (e.g., oxide layers). During operation of thefirst and second memory cells 102 a, 102 b, the dielectric layers 117,121 are structured to promote electron tunneling to and from thecharge-trapping layer 119, such that the charge-trapping layer 119 canretain trapped electrons that alter the threshold voltage of the splitgate flash memory cells 102 a, 102 b in a discrete manner thatcorresponds to different data states being stored in the split gateflash memory cells 102 a, 102 b.

Memory gate sidewall spacers 120 a, 120 b are arranged on outer edges ofthe ledges formed by upper surface of the charge-trapping dielectricstructure 118 a, 118 b. In some embodiments, the memory gate sidewallspacers 120 a, 120 b comprise first, inner memory gate spacers 122 andsecond, outer memory gate spacers 124. The first memory gate spacers 122are arranged on ledges of the first and second memory gates 112 a, 112 band extend along outer sidewalls of the first and second memory gates112 a, 112 b. The second memory gate spacers 124 are arranged on thecharge-trapping dielectric structure 118 a, 118 b and extend along outersidewalls of the first memory gate spacers 122.

Nitride-free or oxide spacers 126 a, 126 b are formed in sidewallrecesses of the charge-trapping dielectric structure 118 a, 118 b, andcan extend upwardly along an outer sidewall of the second memory gatespacers 124 over an outer edge of the channel regions 114 a, 114 bnearest the individual source regions 104 a, 104 b. The material ofnitride-free or oxide spacers 126 a, 126 b can also be disposed along aninner sidewall of select gates 110 a, 110 b (see 128 a, 128 b), and canextend into a sidewall recess within SG dielectrics 116 a, 116 b. Thenitride-free or oxide spacers 126 a, 126 b can each have an uppersurface that is tapered to have a first height at the memory gatesidewall spacers 120 a, 120 b and a second, reduced height nearer thefirst and second individual source regions 104 a, 104 b.

Nitride sidewall spacers 130 a, 130 b, such as made of silicon nitride(e.g., Si3N4) or silicon oxynitride (SiOxNy), can extend along outersidewalls of the nitride-free or oxide spacers 126 a, 126 b. Aninter-layer dielectric (ILD) 132, such as silicon dioxide or a low-Kdielectric material, is disposed over the structure, and contacts 134extend downward through the ILD layer 132 to make contact with asilicide layer 136 on an upper region of the individual source regions104 a, 104 b and common drain region 106.

By positioning the oxide spacer layer or the nitride-free spacer 126 a,126 b over an edge portion of channel regions 114 a, 114 b; the spacers126 a, 126 b “push” the nitride sidewall spacers 130 a, 130 b outwards,which limits undesirable charge-trapping due to the nitride sidewallspacers 130 a, 130 b. Thus, Vt degradation over a lifetime of the memorycells 102 a, 102 b is limited.

With reference to FIG. 2, a flowchart of some embodiments of a method200 for manufacturing an integrated circuit is provided.

At 202, a pair of select gates are formed over a semiconductorsubstrate.

At 204, a charge-trapping layer is formed over the pair of select gatesand over the semiconductor substrate. A memory gate layer is then formedover the charge-trapping layer.

At 206, a first memory gate spacer layer is conformally formed over thememory gate layer.

At 208, the first memory gate spacer layer and memory gate layer areetched back to establish memory gate precursors and first memory gatespacers. The memory gate precursors are formed along outer sidewalls ofthe pair of select gates and between neighboring sidewalls of the selectgates. The first memory gate spacers are disposed along ledges in thememory gate precursors, wherein the ledges are on outer sidewalls of thememory gate precursors.

At 210, the memory gate precursors are recessed to expose sidewalls ofthe charge-trapping layer and to form memory gates along the outersidewalls of the pair of select gates.

At 212, second memory gate spacers are formed along outer sidewalls ofthe first memory gate spacers and along the exposed sidewalls of thecharge trapping layer.

At 214, the remaining memory gate material is removed from betweenneighboring sidewalls of the neighboring select gates.

At 216, portions of the charge-trapping layer that are not covered bythe memory gates and memory gate spacers are removed.

At 218, an oxide spacer or nitride-free spacer is formed along outersidewalls of the second memory gate spacers and along outer sidewalls ofthe charge-trapping layer. The oxide or nitride-free spacer extendsunder the second memory gate spacers.

At 220, nitride sidewall spacers are formed along inner sidewalls of theselect gates and outer sidewalls of the oxide or nitride-free spacer.

At 222, an ion implantation operation is carried out to formsource/drain regions. A silicide layer, such as a nickel silicide forexample, is formed over the source/drain regions.

At 224, an ILD layer is formed over the structure. The structure is thenplanarized, and contacts are formed through the ILD layer to ohmicallyconnect to the source/drain regions.

While the disclosed method 200 is illustrated and described herein as aseries of acts or events, it will be appreciated that the illustratedordering of such acts or events are not to be interpreted in a limitingsense. For example, some acts may occur in different orders and/orconcurrently with other acts or events apart from those illustratedand/or described herein. Further, not all illustrated acts may berequired to implement one or more aspects or embodiments of thedescription herein, and one or more of the acts depicted herein may becarried out in one or more separate acts and/or phases.

With reference to FIGS. 3-19, cross-sectional views of a method offorming a pair of split gate memory cells according to some embodimentsare provided. Although FIGS. 3-19 are described in relation to method200, it will be appreciated that the structures disclosed in FIGS. 3-19are not limited to such a method.

FIG. 3 illustrates some embodiments of a cross-sectional view 300corresponding to act 202.

As shown in cross-sectional view 300, a semiconductor substrate 108 isprovided. A select gate dielectric layer 116′ is formed on thesemiconductor substrate 108, and a select gate layer is formed over theselect gate dielectric layer 116′. A select gate (SG) hard mask 302 a,302 b is then formed over the select gate layer, and an etch is carriedout with the SG hard mask in place to form a pair of select gates 110 a,110 b. In some embodiments, the SG hard mask 302 a, 302 b is formed by alithographic process, wherein a layer of photoresist liquid is spun ontothe select gate layer and the photoresist is selectively exposed tolight through lithography. The exposed resist is then developed and canconstitute the SG hard mask 302 a, 302 b, or can be used to pattern anitride layer or another layer(s) to constitute the SG hard mask 302 a,302 b.

The semiconductor substrate 108 can be n-type or p-type, and can, forexample, be a silicon wafer, such as a Si bulk wafer or asilicon-on-insulator (SOI) wafer. If present, an SOI substrate comprisesan active layer of high quality silicon, which is separated from ahandle wafer by a buried oxide layer. The select gate dielectric layer116′ can be an oxide, such as silicon dioxide, or a high-κ dielectricmaterial. The select gates 110 a, 110 b are made of a conductivematerial, such as doped polysilicon. The SG hard masks 302 a, 302 boften include nitrogen, and can be silicon nitride in some embodiments.

FIG. 4 illustrates some embodiments of a cross-sectional view 400corresponding to act 204.

As shown in cross-sectional view 400, a charge-trapping layer 118′ isformed over an upper surface of the SG hard masks 302 a, 302 b, alongsidewalls of SG hard masks 302 a, 302 b; along sidewalls of select gates110 a, 110 b; and along sidewalls of SG dielectric layer 116′. A memorygate (MG) layer 112′ is then formed over the upper surfaces andsidewalls of the charge-trapping layer 118′.

In some embodiments, the charge-trapping layer 118′ can be formed byplasma enhanced chemical vapor deposition (PECVD). In some embodiments,the charge-trapping layer 118′ includes a charge-trapping siliconnitride layer sandwiched between two silicon dioxide layers to create athree-layer stack commonly referred to as an “ONO” layer. In otherembodiments, the charge-trapping layer 118′ may include a silicon-richnitride film or a layer of silicon nanoparticle dots, or any film thatincludes, but is not limited to, silicon, oxygen, and nitrogen invarious stoichiometries. In some embodiments, the MG layer 112′ can be,for example, doped polysilicon or metal. The MG layer 112′ can be formedby deposition techniques such as chemical vapor deposition (CVD) orphysical vapor deposition (PVD), for example.

FIG. 5 illustrates some embodiments of a cross-sectional view 500corresponding to act 206.

As shown in cross-sectional view 500, first memory gate spacer layer122′ is formed over the upper surfaces and sidewalls of the memory gatelayer 112′. The first memory gate spacer layer 122′ can be a conformallayer made of silicon nitride, for example. In some embodiments, thefirst memory gate spacer layer 122′ can be formed by plasma enhancedchemical vapor deposition (PECVD), chemical vapor deposition (CVD) orphysical vapor deposition (PVD).

FIG. 6 illustrates some embodiments of a cross-sectional view 600corresponding to act 208.

As shown in cross-sectional view 600, first MG spacers 122 are formeddirectly along sidewalls of the memory gate precursors 112 a′, 112 b′.In some embodiments, the first memory gate spacers 122 are formed bycarrying out an anisotropic etch 602 to etch the first memory gatespacer layer 122′ and the memory gate layer 112′ back to form first MGspacers 122 and memory gates precursors 112 a′, 112 b′.

FIG. 7 illustrates some embodiments of a cross-sectional view 700corresponding to act 210.

As shown in cross-sectional view 700, a second etch 702 is performed torecess the memory gate precursors 112 a′, 112 b′, thereby forming memorygates 112 a, 112 b. The first memory gate spacers 122 protect the uppercorners of the memory gates 112 a, 112 b during second etch 702. In someembodiments, the second etch 702 may be performed using a dry etchant(e.g., an RIE etch, a plasma etch, etc.) or a wet etchant (e.g.,hydrofluoric acid). The second etch 702 recesses the memory gateprecursors to a height level substantially equal to that of the selectgates 110 a, 110 b. An etchant used in the second etch 702 may behighly-selective to the charge-trapping layer 118′, so as to not damagethe charge-trapping layer 118′.

FIG. 8 illustrates some embodiments of a cross-sectional view 800corresponding to act 212.

As shown in cross-sectional view 800, second MG spacers 124 are formeddirectly on outer sidewalls of the first memory gate spacers 122, anddirectly over the charge-trapping layer 118′. The second MG spacers 124extend along outer sidewalls (of the first MG spacers 122. In someembodiments, the second memory gate spacers 124 are formed by depositinga nitride layer over the entire structure and performing an anisotropicetch to form second MG spacers 124. In some embodiments, the second MGspacers 124 comprise silicon nitride. The material of the MG spacers mayalso reside over memory gates 112 a, 112 b and on exposed sidewalls ofcharge-trapping dielectric layer 118′.

FIGS. 9-10 illustrate some embodiments of cross-sectional views 900,1000 corresponding to act 214.

As shown in cross-sectional view 900 (FIG. 9), a mask 904 is patternedover the structure, and with the mask 904 in place, a third etch 902 isperformed to remove the remaining MG material from between neighboringselect gates 110 a, 110 b; resulting in the structure of FIG. 10. Invarious embodiments, the etchant used in the third etch 902 may be a dryetchant (e.g., an RIE etch, a plasma etch, etc.) or a wet etchant (e.g.,hydrofluoric acid).

FIGS. 10-11 illustrate some embodiments of cross-sectional views 1000,1100 corresponding to act 216.

As shown in cross-sectional view 1000 (FIG. 10), the mask 904 has beenremoved, and a fourth etch 1002 is then performed to remove exposedportions of the charge-trapping layer 118′ (i.e., portions of thecharge-trapping layer 118′ not covered by the memory gates 112 a, 112 band not covered by first and second MG spacers 122, 124). In someembodiments, the fourth etch 1002 may be performed using a dry etchant(e.g., an RIE etch, a plasma etch, etc.) or a wet etchant (e.g.,hydrofluoric acid), thereby resulting in the structure of FIG. 11.

As can be seen from FIG. 11, the fourth etch 1002 may remove portions ofthe charge-trapping dielectric layer 118′ to expose upper surface of thesemiconductor substrate 108. The fourth etch 1002 may also form outersidewall recesses 1102 in the charge trapping dielectric structure 118a, 118 b. These outer sidewall recesses 1102 may have a roundedcross-sectional profile or a concave cross-sectional profile. In someembodiments, the fourth etch 1002 may also form inner sidewall recesses1104 in the SG dielectric 116 a, 116 b. The amount of undercut by whichthese sidewall recesses undercut the overlying structures may varywidely. For example, in some embodiments, the outer sidewall recesses1102 may have an innermost surface that terminates directly under thefirst MG spacers 122, but in other embodiments the outer sidewallrecesses 1102 may have an innermost surface that terminates directlyunder the second MG spacers 124.

FIG. 12 illustrates some embodiments of a cross-sectional view 1200corresponding to act 218.

As shown in FIG. 12, an oxide spacer layer or a nitride-free spacerlayer 126′ is formed over the structure. The oxide spacer layer or thenitride-free spacer layer 126′ can be a conformal layer that fully orpartially fills the inner and outer sidewall recesses 1102, 1104. Insome embodiments, the oxide spacer layer is made of silicon dioxide andis formed by chemical vapor deposition (CVD), plasma vapor deposition(PVD), spin on techniques, or other suitable techniques. Thenitride-free spacer layer is a dielectric layer that exhibits andabsence of nitride.

FIG. 13 illustrates some embodiments of a cross-sectional view 1300corresponding to act 218.

As shown in FIG. 13, a fifth etch 1302 is carried out to the form anoxide spacer or nitride-free spacer 126 a, 126 b along outer sidewallsof the second MG spacers 124. The fifth etch may also leave oxidespacers or nitride-free spacers 128 a, 128 b on inner sidewall of selectgates 110 a, 110 b. In some embodiments, the fifth etch 1302 is ananisotropic etch, such as a highly vertical plasma etch.

FIG. 14 illustrates some embodiments of a cross-sectional view 1400corresponding to act 220.

As shown in cross-sectional view 1400, a nitride spacer material 130′ isformed over the structure. In some embodiments, the sidewall spacermaterial 130′ can be silicon nitride. In some embodiments, the nitridespacer material 130′ is formed concurrently with a sidewall spacerformed along sidewalls of a gate electrode on a logic region of thesemiconductor substrate 108. The logic region can be separate from amemory region where the split gate memory device are formed.

FIG. 15 illustrates some embodiments of a cross-sectional view 1500corresponding to act 220.

As shown in cross-sectional view 1500, the nitride spacer material 130′is etched to form nitride sidewall spacers 130 a, 130 b extending alongouter sidewalls of the oxide spacer layer or the nitride-free spacerlayer 126. By positioning the oxide spacers or the nitride-free spacers126 a, 126 b over the channel region between source/drain regions, thespacers 126 a, 126 b “push” the nitride sidewall spacer 130 a, 130 boutwards; thereby limiting undesirable charge-trapping in the finaldevice.

FIG. 16 illustrates some embodiments of a cross-sectional view 1600corresponding to act 222.

As shown in cross-sectional view 1600, an ion implantation 1602 iscarried out to form individual source regions 104 a, 104 b, and commondrain region 106 in the semiconductor substrate 108. A silicide layer136 is formed over the individual source regions 104 a, 104 b, andcommon drain region 106 to facilitate ohmic connection to the individualsource regions and common drain region. Alternatively, rather than ionimplantation, individual source regions 104 a, 104 b, and common drainregion 106 can be formed by forming a heavily doped layer over thestructure, and dopants can be out-diffused from the heavily doped layerinto the substrate to form individual source regions 104 a, 104 b, andcommon drain region 106. In some embodiments, the individual sourceregions 104 a, 104 b and common drain region 106 are self-aligned toedges of the nitride spacers 130 a, 130 b or nitride-free or oxidespacers 126, 128.

FIG. 17 illustrates some embodiments of a cross-sectional view 1700corresponding to act 224.

As shown in cross-sectional view 1700, an interlayer dielectric (ILD)layer 132, for example a low-K material, is formed to fill spaces overthe silicide layer 136 and cover the workpiece. A planarization processis also carried out on the structure of FIG. 17 to reach CMP plane 1702,as shown in FIGS. 17-18.

FIG. 18 illustrates some embodiments of a cross-sectional view 1800corresponding to act 224.

As shown in FIG. 18, a planarization process is performed to form selectgates 110 a, 110 b; memory gates 112 a, 112 b; charge-trappingdielectric structure 118 a, 118 b; first memory gate spacers 122; andsecond memory gate spacers 124. These structures have upper surfacesplanarized along a horizontal plane 1702. See also FIG. 17, whichillustrates the horizontal plane 1702 prior to planarization beingcarried out. It is duly noted that the spacing of the horizontal plane1702 over the upper surface of semiconductor substrate 108 can varywidely depending on the implementation. For example, in some otherembodiments, the horizontal plane 1702 at which planarization iscompleted can be higher than illustrated, leaving some or all portionsof the SG hard masks 302 a, 302 b in place in the final manufacturedstructure. In other embodiments, however, the horizontal plane 1702 canbe lower than illustrated, removing larger portions of the illustratedstructures—for example, possibly removing upper portions of spacers 126a, 126 b to leave spacers 126 a, 126 b with a planar upper surface.

FIG. 19 illustrates some embodiments of a cross-sectional view 1900corresponding to act 224.

As shown in cross-sectional view 1900, contacts 134 are formed throughthe ILD layer 132, extending to the individual source regions 104 a, 104b and common drain region 106. In some embodiments, the contacts 134comprise a metal, such as copper, gold, or tungsten. In someembodiments, the contacts 134 are formed by performing a patterned etchto create openings in the ILD layer 132, followed by filling theopenings with a metal.

Thus, the present disclosure relates to an integrated circuit thatincludes a split gate flash memory cell. In some embodiments, theintegrated circuit includes a semiconductor substrate having first andsecond source/drain regions which are separated from one another by achannel region. The channel region includes a first portion adjacent tothe first source/drain region and a second portion adjacent the secondsource/drain region. A select gate is spaced over the first portion ofthe channel region and is separated from the first portion of thechannel region by a select gate dielectric. A memory gate is spaced overthe second portion of the channel region and is separated from thesecond portion of the channel region by a charge-trapping dielectricstructure. The charge-trapping dielectric structure extends upwardlyalongside the memory gate to separate neighboring sidewalls of theselect gate and memory gate from one another. An oxide spacer ornitride-free spacer is arranged in a sidewall recess of thecharge-trapping dielectric structure nearest the second source/drainregion.

In other embodiments, the present disclosure relates to an integratedcircuit including a pair of split gate flash memory cells. Theintegrated circuit includes a semiconductor substrate having a commonsource source/drain region and first and second individual source/drainregions which are separated from the common source/drain region by firstand second channel regions, respectively. First and second select gatesare spaced over the first and second channel regions, respectively, andare separated from the first and second channel regions by first andsecond select gate dielectrics, respectively. First and second memorygates are spaced over the first and second channel regions,respectively, and are separated from the semiconductor substrate by acharge-trapping dielectric structure. The charge-trapping dielectricstructure extends upwardly along outer sidewalls of the first and secondselect gates to separate the outer sidewalls of the select gates frominner sidewalls of the memory gates. An oxide spacer or nitride-freespacer is arranged in a sidewall recess of the charge-trappingdielectric structure nearest the first or second individual source/drainregion.

In yet another embodiment, the present disclosure relates to a method offorming a split gate memory device. In this method, a pair of selectgates is formed over a semiconductor substrate. A charge-trapping layeris formed over the semiconductor substrate and along outer sidewalls ofthe select gates. Memory gates are formed over the charge-trappinglayer. The memory gates are adjacent to the outer sidewalls of the pairof select gates and are separated from the outer sidewalls of the pairof select gates by the charge-trapping layer. Memory gate spacers areformed along outer sidewalls of the memory gates. Portions of thecharge-trapping layer not covered by the memory gates and the memorygate spacers are removed to leave sidewall recesses in thecharge-trapping layer under outer sidewalls of the memory gate spacers.An oxide spacer or nitride-free spacer is then formed along outersidewalls of the memory gate spacers. The oxide spacer or nitride-freespacer extends into the sidewall recess in the charge-trapping layer.

It will be appreciated that in this written description, as well as inthe claims below, the terms “first”, “second”, “second”, “third” etc.are merely generic identifiers used for ease of description todistinguish between different elements of a figure or a series offigures. In and of themselves, these terms do not imply any temporalordering or structural proximity for these elements, and are notintended to be descriptive of corresponding elements in differentillustrated embodiments and/or un-illustrated embodiments. For example,“a first dielectric layer” described in connection with a first figuremay not necessarily correspond to a “first dielectric layer” describedin connection with a second figure (e.g., and may even correspond to a“second dielectric layer” in the second figure), and may not necessarilycorrespond to a “first dielectric layer” in an un-illustratedembodiment.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated circuit including a split gateflash memory cell, comprising: a semiconductor substrate including firstand second source/drain regions which are separated from one another bya channel region; a gate electrode spaced over the channel region andseparated from the channel region by a charge-trapping dielectricstructure, wherein the charge-trapping dielectric structure extendslaterally past a sidewall of the gate electrode to establish a ledge,and wherein a sidewall recess in the charge-trapping dielectricstructure undercuts the ledge; a first spacer arranged in the sidewallrecess of the charge-trapping dielectric structure directly over thechannel region; and a second spacer disposed on the ledge and extendingupwardly alongside a sidewall of the gate electrode to separate thesidewall of the gate electrode from the first spacer.
 2. The integratedcircuit of claim 1, wherein the first spacer is a nitride-free spacer oran oxide spacer.
 3. The integrated circuit of claim 1, wherein the firstspacer has a first composition that differs from a second composition ofthe second spacer.
 4. The integrated circuit of claim 1, wherein thesecond spacer comprises a first, inner sidewall spacer arranged on anupper surface of the gate electrode and a second outer sidewall spacerarranged on the ledge and contacting the first, inner sidewall spacer.5. The integrated circuit of claim 1, wherein the first spacer is nearerthe first source/drain region than the second source/drain region andextends upwardly along an outer sidewall of the second spacer, where thefirst spacer has an upper surface that is tapered to have a first heightat the second spacer and a second, reduced height nearer the firstsource/drain region.
 6. The integrated circuit of claim 5, furthercomprising: a third spacer disposed along an outer sidewall of the firstspacer, the third spacer being disposed between the first spacer and thefirst source/drain region.
 7. The integrated circuit of claim 6, wherethe third spacer has an upper surface that is tapered to have thesecond, reduced height where the third spacer contacts the outersidewall of the first spacer, and has a third height less than thesecond, reduced height on an outer sidewall of the third spacer nearerthe first source/drain region.
 8. The integrated circuit of claim 1,wherein the channel region includes a first portion adjacent to thefirst source/drain region and a second portion adjacent the secondsource/drain region, and wherein the gate electrode is a memory gatespaced over the second portion of the channel region, and furthercomprising: a select gate spaced over the first portion of the channelregion and separated from the first portion of the channel region by aselect gate dielectric.
 9. The integrated circuit of claim 8, whereinthe charge-trapping dielectric structure extends upwardly alongside aninner sidewall of the memory gate to separate neighboring sidewalls ofthe select gate and memory gate from one another, and extends laterallypast an outer sidewall of the memory gate to establish the ledge. 10.The integrated circuit of claim 1, wherein the charge-trappingdielectric structure comprises a nitride layer sandwiched between firstand second dielectric layers, or wherein the charge-trapping dielectricstructure comprises a layer of sphere-like silicon dots sandwichedbetween first and second dielectric layers.
 11. An integrated circuitincluding a pair of split gate flash memory cells, comprising: asemiconductor substrate including a common source/drain region and firstand second individual source/drain regions which are separated from thecommon source/drain region by first and second channel regions,respectively; first and second gate electrodes spaced over the first andsecond channel regions, respectively, and separated from the first andsecond channel regions by first and second gate dielectrics,respectively; and a pair of first inner spacers arranged proximate tothe common source/drain region in inner sidewall recesses of the firstand second gate dielectrics.
 12. The integrated circuit of claim 11,wherein the first and second gate electrodes are first and second selectgates, respectively, and further comprising: first and second memorygates spaced over the first and second channel regions, respectively,and separated from the semiconductor substrate by a charge-trappingdielectric structure, wherein the charge-trapping dielectric structureextends upwardly along outer sidewalls of the first and second selectgates to separate the outer sidewalls of the first and second selectgates from inner sidewalls of the first and second memory gates andextends laterally past a sidewall of the first memory gate to establisha ledge.
 13. The integrated circuit of claim 12, wherein thecharge-trapping dielectric structure extends laterally past first andsecond outer sidewalls of the first and second memory gates,respectively, to establish first and second ledges, respectively; andfurther comprising: first and second memory gate sidewall spacersdisposed on the first and second ledges, respectively, and extendingupwardly alongside the first and second outer sidewalls of the first andsecond memory gates, respectively.
 14. The integrated circuit of claim11, further comprising: a pair of second inner spacers arranged alonginner sidewalls the pair of first inner spacers, respectively; and acontact extending downward between inner sidewalls of the second pair ofinner spacers to contact the common source/drain region.
 15. Theintegrated circuit of claim 13, wherein the first and second memory gatesidewall spacers have different heights from the pair of first innerspacers arranged in the inner sidewall recesses of the first and secondgate dielectrics.
 16. The integrated circuit of claim 14, wherein thefirst and second memory gate sidewall spacers have different heightsfrom the pair of second inner spacers arranged along the inner sidewallsthe pair of first inner spacers, respectively.
 17. An integrated circuitincluding a split gate flash memory cell, comprising: a semiconductorsubstrate including first and second source/drain regions which areseparated from one another by a channel region; a gate electrode spacedover the channel region and separated from the channel region by acharge-trapping dielectric structure, the charge-trapping dielectricstructure including an upper dielectric layer and a lower dielectriclayer that are separated from one another by a charge-trapping layer,wherein the upper dielectric layer extends laterally past an outersidewall of the gate electrode to establish a ledge and wherein an outersidewall recess undercuts the ledge; a first spacer disposed on theledge and extending upwardly alongside an outer sidewall of the gateelectrode; and a second spacer arranged in the outer sidewall recess ofthe charge-trapping dielectric structure, wherein the first spacerseparates the outer sidewall of the gate electrode from the first secondspacer.
 18. The integrated circuit of claim 17, wherein the first spacercomprises a first, inner sidewall spacer arranged on an upper surface ofthe gate electrode and a second outer sidewall spacer arranged on theledge and contacting the first, inner sidewall spacer.
 19. Theintegrated circuit of claim 17, wherein the channel region includes afirst portion adjacent to the first source/drain region and a secondportion adjacent the second source/drain region, and wherein the gateelectrode is a memory gate spaced over the second portion of the channelregion, and further comprising: a select gate spaced over the firstportion of the channel region and separated from the first portion ofthe channel region by a select gate dielectric.
 20. The integratedcircuit of claim 19, wherein the charge-trapping dielectric structureextends upwardly alongside an inner sidewall of the memory gate toseparate neighboring sidewalls of the select gate and memory gate fromone another, and extends laterally past an outer sidewall of the memorygate to establish the ledge.